Vishay semiconductors – C&H Technology VS-GT75NP120N User Manual
Page 5
VS-GT75NP120N
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Vishay Semiconductors
Revision: 01-Feb-13
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Document Number: 94829
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-Emitter-Voltage
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Typical Switching Times vs. R
g
Fig. 9 - Typical Forward Characteristics (Diode)
0
100
300
200
400
0
4
6
2
8
12
10
14
16
V
CC
= 600 V
I
C
= 75 A
V
G
E
(V)
I
C
(mA)
10
1
10
2
10
0
10
-1
0
25
50
75
100
V
CE
(V)
C (nF)
C
oes
C
res
C
ies
10
2
10
3
10
1
t (ns)
I
C
(A)
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 15
Ω
V
CC
= 600 V
0
20
60
40
80
100
120
140
160
10
2
10
4
10
3
10
1
0
10
20
30
40
50
R
g
(
Ω)
t (ns)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 75 A
V
CC
= 600 V
t
d(off)
t
f
t
r
t
d(on)
150
125
100
75
50
25
0
1.5
2
0.5
0
1
2.5
3
25 °C
125 °C
V
F
(V)
I
F
(V)