Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT75NP120N User Manual
Page 4
VS-GT75NP120N
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Vishay Semiconductors
Revision: 01-Feb-13
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Document Number: 94829
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. I
C
Fig. 4 - Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.28
K/W
Diode
-
-
0.48
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
Weight of module
-
150
-
g
150
125
100
75
50
25
0
1.5
2
0.5
0
1
2.5
3
3.5
25 °C
125 °C
I
C
(A)
V
CE
(V)
V
GE
= 15 V
0
2
6
4
8
10
12
14
V
GE
(V)
I
C
(A)
V
CE
= 50 V
300
250
200
150
100
50
0
125 °C
25 °C
E
on
, E
of
f
(mJ)
0
20
60
40
80
100
120
140
160
12
10
8
6
4
2
0
I
C
(A)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 15
Ω
V
CC
= 600 V
E
off
E
on
0
10
30
20
40
50
0
4
6
2
8
12
10
14
18
16
20
R
g
(
Ω)
E
off
E
on
, E
of
f
(mJ)
T
J
=
125 °C
V
CC
= 600 V
V
GE
= ± 15 V
I
C
= 75 A
E
on