Vishay semiconductors, Igbt electrical specifications (t, Switching characteristics – C&H Technology VS-GT75NP120N User Manual
Page 3: Diode electrical specifications (t

VS-GT75NP120N
www.vishay.com
Vishay Semiconductors
Revision: 01-Feb-13
2
Document Number: 94829
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
(BR)CES
T
J
= 25 °C
1200
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 75 A, T
J
= 25 °C
-
2.08
-
V
GE
= 15 V, I
C
= 75 A, T
J
= 175 °C
-
2.35
-
Gate to emitter threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 3.5 mA, T
J
= 25 °C
5.0
6.0
7.5
Collector cut-off current
I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
-
-
1.0
mA
Gate to emitter leakage current
I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
-
-
400
nA
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Turn-on delay time
t
d(on)
V
CC
= 600 V, I
C
= 75 A, R
g
= 15
,
V
GE
= ± 15 V, T
J
= 25 °C
-
260
-
ns
Rise time
t
r
-
30
-
Turn-off delay time
t
d(off)
-
420
-
Fall time
t
f
-
70
-
Turn-on switching loss
E
on
-
4.70
-
mJ
Turn-off switching loss
E
off
-
6.20
-
Turn-on delay time
t
d(on)
V
CC
= 600 V, I
C
= 75 A, R
g
= 4.7
,
V
GE
= ± 15 V, T
J
= 125 °C
-
120
-
ns
Rise time
t
r
-
75
-
Turn-off delay time
t
d(off)
-
310
-
Fall time
t
f
-
260
-
Turn-on switching loss
E
on
-
6.2
-
mJ
Turn-off switching loss
E
off
-
5.5
-
Input capacitance
C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
-
9.45
-
nF
Output capacitance
C
oes
-
0.34
-
Reverse transfer capacitance
C
res
-
0.23
-
SC data
I
SC
t
p
10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
1200 V
-
TBD
-
A
Stray inductance
L
CE
-
-
30
nH
Module lead resistance, terminal to chip
R
CC’+EE’
T
C
= 25 °C
-
0.75
-
m
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Forward voltage
V
F
I
F
= 75 A
T
J
= 25 °C
-
2.1
-
V
T
J
= 125 °C
-
1.9
-
Reverse recovery time
t
rr
I
F
= 75 A, V
R
= 600 V,
dI
F
/dt = - 2500 A/μs
V
GE
= - 15 V
T
J
= 25 °C
-
70
-
μC
T
J
= 125 °C
-
141
-
Peak reverse recovery current
I
rr
T
J
= 25 °C
-
47
-
A
T
J
= 125 °C
-
65
-
Reverse recovery energy
E
rec
T
J
= 25 °C
-
TBD
-
mJ
T
J
= 125 °C
-
TBD
-