Panasonic MA24D52 - Manual

Schottky Barrier Diodes (SBD)
Publication date: March 2007 SKH00159AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D52
Silicon epitaxial planar type
For rectification
 Features
 Forward current (Average) I
F(AV)
= 3.0 A rectification is possible
 Extremely small reverse current I
R
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
40 V
Maximum peak reverse voltage V
RM
40 V
Forward current (Average) * I
F(AV)
3.0 A
Non-repetitive peak forward surge
current
I
FSM
60 A
Junction temperature T
j
150 ° C
Storage temperature T
stg
-40 to +150 ° C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current V
F
I
F
= 3.0 A 0.48 0.53 V
Reverse current I
R
V
R
= 40 V 50 m A
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 75 pF
Reverse recovery time *1 t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA
R
L
= 100 W
25 ns
Thermal resistance
R
th(j-a)
*2 55
° C/W R
th(j-a)
*3 210
R
th(j-l)
10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *1: t
rr
test Circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = I R = 100 mA
R
L = 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
*2: Mounted on an alumina PC board (board: 50 mm × 50 mm × 0.8 t, soldering land: 1.4 mm × 2.1 mm)
*3: With a glass epoxy PC board (board: 50 mm × 20 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
Unit: mm
1: Anode
2: Cathode TMiniP2-F1 Package
2.40 ± 0.10 0.15 ± 0.05
1
2
1.75 ± 0.05
4.7
0 ±0.10
3.80
±0.05
0.450
±0.05
5°
0 to 0.40
0 to 0.0
3 0.90 max.
5°
Marking Symbol: 5T