Panasonic 2SA2174G - Manual

Transistors
Publication date: May 2007 SJC00386AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2174G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054G
 Features
 High forward current transfer ratio h
FE
 SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
- 60 V
Collector-emitter voltage (Base open) V
CEO
- 50 V
Emitter-base voltage (Collector open) V
EBO
- 7 V
Collector current I
C
- 100 mA
Peak collector current I
CP
- 200 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
- 55 to +125 ° C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= -10 mA, I
E
= 0 - 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= -2 mA, I
B
= 0 - 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= -10 mA, I
C
= 0 - 7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= -20 V, I
E
= 0 - 0.1 m A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= -10 V, I
B
= 0 - 100 m A
Forward current transfer ratio h
FE
V
CE
= -10 V, I
C
= -2 mA 160 460 
Collector-emitter saturation voltage V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA - 0.2 - 0.5 V
Transition frequency f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
 Package
 Code
SSMini3-F3

Marking Symbol: 7L
 Pin Name
1. Base
2. Emitter
3. Collector