Panasonic 2SD0965 - Manual

Transistors
1 Publication date: January 2003 SJC00200BED
2SD0965
(2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
40 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
5 A
Peak collector current I
CP
8 A
Collector power dissipation P
C
750 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0
20 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0
7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 1 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 7 V, I
C
= 0 0.1 µA
Forward current transfer ratio h
FE1
* V
CE
= 2 V, I
C
= 0.5 A 230 600 
h
FE2
V
CE
= 2 V, I
C
= 1 A 150
Collector-emitter saturation voltage V
CE(sat)
I
C
= 3 A, I
B
= 0.1 A
0.28 1.00 V
Transition frequency f
T
V
CB
= 6 V, I
E
= −50 mA, f = 200 MHz
150 MHz
Collector output capacitance C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz
26 50 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0 ±0.2
0.7 ±0.1
0.45 +0.15
–0.1
2.5 +0.6
–0.2
0.45 +0.15
–0.1
2.5
1 2 3
+0.6
–0.2
4.0 ±0.2
5.1
± 0.2
12.9
± 0.5
2.3
± 0.2
0.7
± 0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank Q R
h
FE1
230 to 380 340 to 600
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).