Panasonic 2SA2174J - Manual

Transistors
Publication date: November 2005 SJC00342AED 1
2SA2174J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054J
 Features
 High forward current transfer ratio h
FE
 SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
− 60 V
Collector-emitter voltage (Base open) V
CEO
− 50 V
Emitter-base voltage (Collector open) V
EBO
− 7 V
Collector current I
C
− 100 mA
Peak collector current I
CP
− 200 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
− 55 to +125 ° C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 − 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 − 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 − 7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µ A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −10 V, I
B
= 0 − 100 µ A
Forward current transfer ratio h
FE
V
CE
= −10 V, I
C
= −2 mA 160 460 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA − 0.2 − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 7L
Unit: mm
1: Base
2: Emitter
3: Collector SSMini3-F1 Package
0.27 ± 0.02
3
1 2
0.12 +0.03
–0.01
0.80
±0.
05
(0.80)
0.85 1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.0
5
–0.03
(0.375)
5
°
5°
1.60 +0.05
–0.03
1.00 ± 0.05
(0.50)(0.50)
+0.0
5
–0.03
This product complies with the RoHS Directive (EU 2002/95/EC).