Panasonic Infrared Light Emitting Diodes LN77L - Manual

SHC00023CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008 1
Infrared Light Emitting Diodes
LN77L
GaAIAs Infrared Light Emitting Diode
For optical control systems
 Features
 High-power output, high-efficiency: P
O
= 18 mW (typ.)
 Fast response and high-speed modulation capability: f
C
= 20 MHz (typ.)
 Wide directivity: θ = 20° (typ.)
 Transparent epoxy resin package
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Power dissipation P
D
190 mW
Forward current I
F
100 mA
Pulse forward current * I
FP
1 A
Reverse voltage V
R
3 V
Operating ambient temperature T
opr
–25 to +85 ° C
Storage temperature T
stg
–30 to +100 ° C
Note) *: f = 100 Hz, Duty cycle = 0.1%
 Electro-Optical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Radiant power P
O
I
F
= 50 mA 10 18 mW
Reverse current I
R
V
R
= 3 V 10 µA
Forward voltage V
F
I
F
= 100 mA 1.6 1.9 V
Peak emission wavelength λ
P
I
F
= 50 mA 860 nm
Spectral half band width Δλ I
F
= 50 mA 40 nm
Half-power angle θ The angle when the radiant power is halved. 20 °
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Modulation total power output 3 dB frequency to fall from 1 MHz.
Cutoff frequency: 20 MHz
f
C
: 10 × log
P
O
at f = f
C = –3
P
O
at f = 1 MHz
3. LED might radiate red light under large current drive.
4. *: A light detection element uses a silicon diode have proofread a load with a standard device.