Panasonic 2SD1149 - Manual

Transistors
1 Publication date: January 2003 SJC00208BED
2SD1149
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
• High emitter-base voltage (Collector open) V
EBO
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
100 V
Collector-emitter voltage (Base open) V
CEO
100 V
Emitter-base voltage (Collector open) V
EBO
15 V
Collector current I
C
20 mA
Peak collector current I
CP
50 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0
100 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0
100 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0
15 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 60 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 60 V, I
B
= 0 1.0 µA
Forward current transfer ratio * h
FE
V
CE
= 10 V, I
C
= 2 mA 400 1 200 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.05 0.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz
100 MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.40 +0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2 1
3
(0.95) (0.95)
1.9 ±0.1
2.90 +0.20
–0.05
0.16 +0.10
–0.06
0.4
± 0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Rank R S
h
FE
400 to 800 600 to 1 200
Marking symbol 1V
This product complies with the RoHS Directive (EU 2002/95/EC).