Panasonic MA27D30 - Manual

Schottky Barrier Diodes (SBD)
1 Publication date:January 2004 SKH00134BED
MA27D30
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current: I
R
< 2
µA (at V
R
= 30 V)
• Optimum for high frequency rectification because of its short
reverse recovery time t
rr
.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average) I
F(AV)
100 mA
Peak forward current I
FM
200 mA
Non-repetitive peak forward I
FSM
1 A
surge current *
Junction temperature T
j
125
°C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 10 mA
0.38 0.44 V
V
F2
I
F
= 100 mA
0.51 0.58 V
Reverse current I
R1
V
R
= 10 V
0.3
µA
I
R2
V
R
= 30 V 2 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 9 pF
Reverse recovery time * t
rr
I
F
= I
R
= 100 mA
1 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
=
25
°C ±
3
°C
Marking Symbol: 8N
Unit: mm
5°
5 °
0.27
1
2
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60 ±0.05
0.20
±0.05
0 to 0.01
0.20
±0.05
0.15 max.
+0.05
–0.02 0.12 +0.05
–0.02
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: t
rr
measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F = 100 mA
I
R = 100 mA
R
L = 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form
Analyzer
(SAS-8130)
R
i = 50 Ω
V
R
A
This product complies with the RoHS Directive (EU 2002/95/EC).