Panasonic UP05C8PG - Manual

Multi Chip Discrete
Publication date: March 2008 SJJ00401AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8PG
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
 Features
 Two elements incorporated into one package (Tr + CCD load device)
 Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
 Basic Part Number
 2SC3932G + CCD load device
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open)
V
CBO
30 V
Collector-emitter voltage
(Base open)
V
CEO
20 V
Emitter-base voltage
(Collector open)
V
EBO
3 V
Collector current I
C
50 mA
CCD
load
device
Limiting element voltage V
max
40 V
Limiting element current I
max
10 mA
Overall
Total power dissipation * P
T
125 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
–55 to +125 ° C
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
 Package
 Code
SSMini6-F2

Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
 Marking Symbol: 4X
 Internal Connection
3
(G)
(S)
4
1
(E)
2
(B)
(C)
6
(D)
5
Tr
FET