Panasonic UP05C8PG User Manual
Up05c8pg, Multi chip discrete

Multi Chip Discrete
Publication date: March 2008
SJJ00401AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8PG
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932G + CCD load device
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Tr
Collector-base voltage
(Emitter open)
V
CBO
30
V
Collector-emitter voltage
(Base open)
V
CEO
20
V
Emitter-base voltage
(Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
CCD
load
device
Limiting element voltage
V
max
40
V
Limiting element current
I
max
10
mA
Overall
Total power dissipation
*
P
T
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Package
Code
SSMini6-F2
Pin Name
1: Emitter
4: Source
2: Base
5: Drain
3: Gate
6: Collector
Marking Symbol: 4X
Internal Connection
3
(G)
(S)
4
1
(E)
2
(B)
(C)
6
(D)
5
Tr
FET