Philips BGA2003 - Manual (Page 3)

2010 Sep 13 3
NXP Semiconductors Product specification
Silicon MMIC amplifier BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; T
j
= 25
°C; unless otherwise specified.
Note
1. See application note RNR-T45-99-B-0514.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
supply voltage RF input AC coupled
−
4.5 V
V
CTRL
voltage on control pin
−
2 V
I
S
supply current (DC) forced by DC voltage on RF input
or I
CTRL
−
30 mA
I
CTRL
control current
−
3 mA
P
tot
total power dissipation T
s
≤ 100 °C −
135 mW
T
stg
storage temperature
−65
+150
°C
T
j
operating junction temperature
−
150
°C
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 350 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current V
VS-OUT
= 2.5 V; I
CTRL
= 0.4 mA 3 4.5 6 mA
V
VS-OUT
= 2.5 V; I
CTRL
= 1.0 mA 8 11 15 mA
MSG maximum stable gain V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
−
24
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
−
16
−
dB
|s
21
| 2 insertion power gain V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
18 19
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
13 14
−
dB
s
12
isolation V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 900 MHz
−
26
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 1800 MHz
−
20
−
dB
NF noise figure V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz;
Γ
S
=
Γ
opt
−
1.8 2 dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz;
Γ
S
=
Γ
opt
−
1.8 2 dB
IP3
(in)
input intercept point; note 1 V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.6 mA;
f = 900 MHz
− −6.5 −
dBm
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.5 mA;
f = 1800 MHz
− −4.8 −
dBm