Philips BGD502 - Manual (Page 4)

2001 Nov 15 4
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier
BGD502
Table 2 Bandwidth 40 to 450 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
.
Notes
1. fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz.
2. Measured according to DIN45004B: fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo
6 dB;
fr = 449.25 MHz; Vr = Vo
6 dB; measured at fp + fq  fr = 438.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 18

19 dB
f = 450 MHz 18.6

20.6 dB
SL slope cable equivalent f = 40 to 450 MHz 0.2

1.8 dB
FL flatness of frequency response f = 40 to 450 MHz
  0.3
dB
s
11
input return losses f = 40 to 80 MHz 20
 
dB
f = 80 to 160 MHz 19
 
dB
f = 160 to 450 MHz 18
 
dB
s
22
output return losses f = 40 to 80 MHz 20
 
dB
f = 80 to 160 MHz 19
 
dB
f = 160 to 450 MHz 18
 
dB
s
21
phase response f = 50 MHz +135

+225 deg
CTB composite triple beat 60 channels flat;
V
o
= 46 dBmV;
measured at 445.25 MHz
  67
dB
CSO composite second order distortion 60 channels flat;
V
o
= 46 dBmV;
measured at 446.5 MHz
  60
dB
X
mod
cross modulation 60 channels flat;
V
o
= 46 dBmV;
measured at 55.25 MHz
  67
dB
d
2
second order distortion note 1
  75
dB
V
o
output voltage d
im
=
60 dB; note 2
67
 
dBmV
NF noise figure f = 450 MHz
 
7 dB
I
tot
total current consumption (DC) note 3

415 435 mA