Philips BGD502 - Manual (Page 2)

2001 Nov 15 2
NXP Semiconductors Product specification
550 MHz, 18.5 dB gain power doubler
amplifier
BGD502
FEATURES
 Excellent linearity
 Extremely low noise
 Silicon nitride passivation
 Rugged construction
 TiPtAu metallized crystals ensure optimal reliability.
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5 +V
B
7, 8 common
9 output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
3 5 1
Side view MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 550 MHz 18.8 20.8 dB
I
tot
total current consumption (DC) V
B
= 24 V

435 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
RF input voltage

65 dBmV
T
stg
storage temperature
40
+100
C
T
mb
operating mounting base temperature
20
+100
C