Panasonic MA26111 User Manual
Silicon epitaxial planar type, Switching diodes, For switching circuits features

This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
Publication date: May 2005
SKF00068AED
1
MA26111
Silicon epitaxial planar type
For switching circuits
Features
Allowing high-density mounting
Short reverse recovery time t
rr
Short reverse recovery time t
Short reverse recovery time t
Small terminal capacitance C
t
High breakdown voltage: V
R
High breakdown voltage: V
High breakdown voltage: V = 80 V
R
R
Absolute Maximum Ratings
T
a
= 25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
V
V
80
V
Forward current
I
F
100
mA
Peak forward current
I
FM
225
mA
Non-repetitive peak forward surge current
*
I
FSM
500
mA
Junction temperature
T
j
TT
125
°
C
Storage temperature
T
stg
TT
–55 to +125
°
C
Note) * : t = 1 s
Electrical Characteristics
T
a
= 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
= 100 mA
0.95
1.2
V
Reverse voltage
V
R
V
V
I
R
= 100
R
R
µ
A
80
V
Reverse current
I
R
V
R
= 75 V
R
R
100
nA
Terminal capacitance
C
t
V
R
= 0, f = 1 MHz
R
R
0.6
2
pF
Reverse recovery time
*
t
rr
tt
I
F
= 10 mA, V
R
= 6 V, I
R
R
rr
= 0.1 I
rrrr
R
,
R
R
R
L
R
R = 100
LL
Ω
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. . *: t
rr
measurement circuit
rr
rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50 Ω
t
p
tt = 2 µs
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100 Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
tt
t
rr
V
R
I
F
t
t
A
A
Marking Symbol: 1
Unit: mm
1: Anode
2: Cathode
ML-2-N1 Package
0.60
±0.05
1.00
±0.05
1
2
0.39
+0.01
−
0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
1
0.05
±0.03
0.05
±0.03
2
0.01
±0.005