Panasonic MA22D17 - Manual

Schottky Barrier Diodes (SBD)
Publication date: December 2004 SKH00140AED 1
MA22D17
Silicon epitaxial planar type
For high frequency rectifi cation
 Features  
 Reverse voltage V  
R
Reverse voltage V Reverse voltage V = 100 V is guaranteed
R R
 High non-repetitive peak forward surge current: I  
FSM
= 20 A
FSM FSM
 Absolute Maximum Ratings   T
a
= 25
aa
° C
Parameter Symbol Rating Unit
Reverse voltage V
R
100 V
Repetitive peak reverse voltage V
RRM
V V 100 V
Forward current (Average) *1 I
F(AV)
300 mA
Non-repetitive peak forward surge current *2 I
FSM
20 A
Junction temperature T
j
TT 125 ° C
Storage temperature T
stg
TT –55 to +125 ° C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics   T
a
= 25
aa
° C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
V V I
F
= 300 mA 0.49 0.57 V
Reverse current I
R
V
R
= 100 V
R R
70 200 µ A
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz
R R
100 pF
Reverse recovery time * t
rr
tt
I
F
= I
R
= 100 mA, I
R R rr
= 10 mA,
rrrr
R
L
R R = 100
LL
Ω
7 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
rr rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
tt = 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
tt
t
rr
V
R
I
F
t
t
A A
Unit: mm
1: Anode
2: Cathode Mini2-F1 Package
5°
1.6 ± 0.1
1
2
0.80 ± 0.05
0.55 ± 0.1 0.16 +0.1
–0.06
3.
5 ±0.
1
2.
6 ±0.
1
0.45 ± 0.1
5°
0 to 0.1
0 to 0.
3
0 to 0.
1
This product complies with the RoHS Directive (EU 2002/95/EC).