Panasonic 2SC6037G - Manual

Transistors
1 Publication date: May 2007 SJC00383AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2161G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−15
V
Collector-emitter voltage (Base open) V
CEO
−12 V
Emitter-base voltage (Collector open) V
EBO
−5
V
Collector current I
C
−500 mA
Peak collector current I
CP
−1
A
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −15
V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −12 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −15 V, I
E
= 0 − 0.1 µA
Forward current transfer ratio h
FE
V
CE
= −2 V, I
C
= −10 mA 270 680 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −200 mA, I
B
= −10 mA −250 mV
Transition frequency f
T
V
CB
= −2 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 4.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Package
• Code
SSMini3-F3
• Marking Symbol: 2U
• Pin Name
1. Base
2. Emitter
3. Collector