Panasonic 2SB1679 User Manual
Silicon pnp epitaxial planar type, Transistors, For low-frequency amplification ■ features
Transistors
1
Publication date: February 2003
SJC00097BED
2SB1679
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
• Large collector output capacitance (Common base, input open cir-
cuited) C
ob
• Low collector-emitter saturation voltage V
CE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−15
V
Collector-emitter voltage (Base open)
V
CEO
−10
V
Emitter-base voltage (Collector open)
V
EBO
−7
V
Collector current
I
C
− 0.5
A
Peak collector current
I
CP
−1
A
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
h
FE1
130 to 220
180 to 350
Marking Symbol: 3V
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5°
10
°
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −1 mA, I
B
= 0
−10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0
−100
nA
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= −2 V, I
C
= − 0.5 A
130
350
h
FE2
V
CE
= −2 V, I
C
= −1 A
60
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= − 0.4 A, I
B
= −8 mA
− 0.16 − 0.30
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= − 0.4 A, I
B
= −8 mA
− 0.8
−1.2
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz
130
MHz
Collector output capacitance
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
22
pF
(Common base, input open circuited)
This product complies with the RoHS Directive (EU 2002/95/EC).