4 ras# to cas# delay (trcd), 5 write recovery time (twr), 6 row refresh cycle (trfc) – Avalue ESM-QM57 User Manual
Page 68: 7 write to read delay (twtr), 8 active to active (trrd), 9 read cas# precharge (trtp)
ESM-QM57
68 ESM- QM57 User
’s Manual
3.6.3.1.4 RAS# to CAS# Delay (tRCD)
This option allows you to insert a delay between the RAS (Row Address Strobe) and CAS
(Column Address Strobe) signals. This delay occurs when the SDRAM is written to, read
from or refreshed. Naturally, reducing the delay improves the performance of the SDRAM
while increasing it reduces performance.
3.6.3.1.5 Write Recovery Time (tWR)
It shows the delay (in clocks cycles) that must elapse after the completion of a valid write
operation. The shorter the delay, the earlier the bank can be precharged for another
read/write operation.
3.6.3.1.6 Row Refresh Cycle (tRFC)
Determines the number of clock measured from a Refresh command (REF) until the first
Activate command (ACT) to the same rank
3.6.3.1.7 Write to Read Delay (tWTR)
This constitutes the minimum number of clock cycles that must occur between the last valid
write operation and the next read command to the same internal bank of the DDR device.
3.6.3.1.8 Active to Active (tRRD)
The minimum time interval between successive ACTIVE commands to the different banks
is defined by tRRD.
3.6.3.1.9 Read CAS# Precharge (tRTP)
Number of clocks that are inserted between a read commands to a row pre-charge
command to the same rank.
Item
Option
Description
Low MMIO Align
64M,
1024M
This option will determine Low
MMIO resources align.
Initiate Graphic Adapter
IGD,
PCI/IGD ; PCI/PEG,
PEG/IGD ; PEG/PCI
This item allows you to select
which graphics controller to use
as the primary boot device.
Graphics Turbo IMON Current
Min= 14, Max= 31
Graphics turbo IMON current
values supported.