Technical specifications, Absolute maximum ratings – MagTek LOW POWER SHIFT-OUT User Manual
Page 12

Low Power Shift-Out IntelliHead
6
TECHNICAL SPECIFICATIONS
Absolute Maximum Ratings
†
Parameter
Conditions (-40
°C to +85°C
unless otherwise stated)
Value Units
V
DD
Steady-state
-0.3 to 4.0V
V
STROBE Input Voltage
Steady-state
-0.3 to VDD+0.3
V
STROBE Protection Diode Current
Steady-state
-20 to 20
DATA Input Voltage
Steady-state
-0.3 to VDD+0.3
V
DATA Protection Diode Current
Steady-state
-20 to 20
mA
DATA Output Current Sourcing
Steady-state
Internally limited
DATA Output Current Sinking
Steady-state
20
mA
Storage Temperature
Steady-state
-55 to
100
˚C
ESD Immunity*
Human Body Model, JESD22-A114-
A, class 2
NOT TESTED
V
ESD Immunity*
Machine Model, JESD22-A115-A,
class 2
NOT TESTED
V
ESD Immunity*
Charge Device Model, ESD-
STM5.3.1-1999, classification C3
NOT TESTED
V
Latch-up Immunity
85 °C, EIA/JESD78
NOT TESTED
mA
*
ESD Immunity refers to a pin-to-pin discharge (not to discharges to the head can). The 5V-to-3V
Shift-Out IntelliHead contains other components in addition to the Delta ASIC (21006541), so the
ESD rating of 21006541 is not necessarily applicable.
†
Red font indicates a difference relative to 99875337.
Electrical Characteristics and Recommended Operating Conditions
†
Value
Parameter
Conditions (-40 °C to +85 °C)
Min Max
Units
V
DD
Operating
2.85
3.6 V
V
DD
Time Constant
To guarantee proper reset functioning under all
conditions
; Not needed; already built-in.
0
I
DD
See “Current Consumption” section
1.2
mA
V
OL
DATA
V
DD
=
2.85
V; I
OL
= 2 mA
0.40
V
I
OH
DATA
V
DATA
= 0 V to 0.85*V
DD
; Steady-state
12
48
μA
V
IH
DATA
0.80* V
DD
V
V
IL
DATA
0.20* V
DD
V
VT+ STROBE
Positive-going threshold
0.40* V
DD
0.80*
V
DD
V
VT- STROBE
Negative-going threshold
0.20* V
DD
0.40*
V
DD
V
STROBE PULL-UP/DWN
STROBE driver must meet the above
threshold constraints while driving this
resistance to VDD or to ground.
18
k
Ω
Hysteresis STROBE
VT+ - VT-
0.4
1.2
V
STROBE Driver Leakage
Leakage constraint for MCU STROBE Driver
when in high-Z state with STROBE pulled
high by the IntelliHead.
N/A 10
μA
C
LOAD
DATA‡
50
pF
Electrostatic Discharge
ESD to head-can with head-can well-
grounded; 150 pF and 330
Ω network
-15 +15 kV
‡
Exceeding CLOAD Max DATA will affect the maximum rate of DATA.
†
Red font indicates a difference relative to 99875337.