SP / Silicon Power SP001GBCRU533S01 - Manual

SP001GBCRU533S01
172pin DDR2 533 Micro DIMM
1. Features
˙ ˙ ˙ ˙Fast data transfer rates: PC2-4200
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˙ ˙ ˙172-pin, Dual In-Line Memory module
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˙ ˙ ˙VDD = VDDQ = +1.8V, VDDSPD = +1.7V to +3.6V
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˙ ˙ ˙JEDEC standard_1.8V I/O (SSTL_1.8-compatible)
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˙ ˙ ˙Differential data strobe (DQS, /DQS) option
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˙ ˙ ˙Four-bit prefetch architecture
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˙ ˙ ˙DLL to align DQ and DQS transitions with CK
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˙ ˙ ˙Multiple internal device banks for concurrent operation
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˙ ˙ ˙Programmable /CAS latency (CL)
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˙ ˙ ˙Posted /CAS additive latency (AL)
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˙ ˙ ˙WRITE latency = READ latency - 1 tCK
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˙ ˙ ˙Programmable burst lengths: 4 or 8
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˙ ˙ ˙Adjustable data-output drive strength
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˙ ˙ ˙64ms, 8,192-cycle refresh
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˙ ˙ ˙On-die termination (ODT)
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˙ ˙ ˙92ball FBGA Leaded & Pb-Free (RoHS compliant) package
2. Module Specification
Item Specification
Capacity 1024MByte
Physical Bank(s) 1
Module Organization 128M x 64bit
Module Type nonECC
Speed Grade PC2-4200 (DDR2 533)
Voltage Interface SSTL_18
Power Supply Voltage 1.8V ± 0.1V
Burst Lengths 4 or 8
DRAM Organization 128M x 8bit DDR2 SDRAM
PCB Layer 6Layers
Contact Tab 172 pin GOLD Flash Plating
Serial PD Support