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Electrical characteristics (continued) – Rainbow Electronics ATR0635P1 User Manual

Page 30

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30

4979D–GPS–06/08

ATR0635P1

6.7

Schmitt trigger hysteresis

VDD18 = 1.65V to 1.95V

CLK23

V

hyst,CLK23

0.2

0.55

V

C

6.8

Schmitt trigger threshold
rising

VDD18 = 1.65V to 1.95V

NRESET V

th+,NRESET

0.8

1.3

V

C

6.9

Schmitt trigger threshold
falling

VDD18 = 1.65V to 1.95V

NRESET

V

th-,NRESET

0.46

0.77

V

C

6.10

Low-level input voltage
VDDIO domain

VDDIO = 1.65V to 3.6V

V

IL,IO

–0.3

+0.41

V

C

6.11

High-level input voltage
VDDIO domain

VDDIO = 1.65V to 3.6V

V

IH,IO

1.46

5.0

V

C

6.12

Low-level input voltage
VBAT18 domain

VBAT18 = 1.65V to 1.95V

A11, B10,

C10, D10

V

IL,BAT

–0.3

+0.41

V

C

6.13

High-level input voltage
VBAT18 domain

VBAT18 = 1.65V to 1.95V

A11, B10,

C10, D10

V

IH,BAT

1.46

5.0

V

C

6.14 Low-level input voltage USB VDD_USB = 3.0V to 3.6V

C9, D9

V

IL,USB

–0.3

+0.8

V

C

6.15

High-level input voltage
USB

VDD_USB = 3.0V to 3.6V
39

Ω

source resistance +

27

Ω

external series resistor

C9, D9

V

IH,USB

2.0

4.6

V

C

6.16

Low-level output voltage
VDD18 domain

I

OL

= 1.5 mA,

VDD18 = 1.65V

V

OL,18

0.4

V

A

6.17

High-level output voltage
VDD18 domain

I

OH

= –1.5 mA,

VDD18 = 1.65V

V

OH,18

VDD18

– 0.45

V

A

6.18

Low-level output voltage
VDDIO domain

I

OL

= 1.5 mA,

VDDIO = 3.0V

V

OL,IO

0.4

V

A

6.19

High-level output voltage
VDDIO domain

I

OH

= –1.5 mA,

VDDIO = 3.0V

V

OH,IO

VDDIO

– 0.5

V

A

6.20

Low-level output voltage
VBAT18 domain

I

OL

= 1 mA

P9, P13,

P22, P31

V

OL,BAT

0.4

V

A

6.21

High-level output voltage
VBAT18 domain

I

OH

= –1 mA

P9, P13,

P22, P31

V

OH,BAT

1.2

V

A

6.22

Low-level output voltage
USB

I

OL

= 2.2 mA,

VDD_USB = 3.0V to 3.6V,
27

Ω

external series resistor

DP, DM

V

OL,USB

0.3

V

A

6.23

High-level output voltage
USB

I

OH

= 0.2 mA,

VDD_USB = 3.0V to 3.6V,
27

Ω

external series resistor

DP, DM

V

OH,USB

2.8

V

A

6.24

Input-leakage current
(standard inputs and I/Os)

VDD18 = 1.95V
V

IL

= 0V

I

LEAK

–1

+1

µA

C

6.25 Input capacitance

I

CAP

10

pF

D

10. Electrical Characteristics (Continued)

If no additional information is given in column Test Conditions, the values apply to temperature range from –40°C to +85°C.

No. Parameters

Test Conditions

Pin

Symbol

Min

Typ

Max

Unit

Type*

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes:

1. The LDO18 is a built in low dropout voltage regulator, which can be used if the host system does not provide the core volt-

age VDD18.

2. The LDOBAT is a built in low dropout voltage regulator, which provides the supply voltage VBAT18 for the RTC, backup

SRAM, P9, P13, P22, P31, NSLEEP and NSHDN. The LDOBAT voltage regulator switches in battery mode if LDOBAT_IN
falls below 1.5V.

3. Supply voltage VBAT18 for backup domain is generated internally by the LDOBAT.

4. If no current is caused by outputs (pad output current as well as current across internal pull-up resistors)