Electrical characteristics (continued) – Rainbow Electronics MAX5043 User Manual
Page 4
MAX5042/MAX5043
Two-Switch Power ICs with Integrated
Power MOSFETs and Hot-Swap Controller
4
_______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
POSINPWM
= 20V to 76V, V
REG15
= 18V, C
REG15
= 4.7µF, C
REG9
= 1µF, C
REG5
= 1µF, R
RCOSC
= 24kΩ, C
RCOSC
= 100pF, C
BST
=
0.22µF, R
DRVDEL
= 10kΩ, C
DRVDEL
= 0.22µF, V
CSS
= V
CSP
= V
CSN
= V
RAMP
= V
PWMNEG
= V
NEGIN
= 0, T
A
= -40°C to +125°C,
unless otherwise noted. Typical values are at V
POSINPWM
= 48V, T
A
= +25°C, unless otherwise noted. All voltages are referred to
PWMNEG, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SYNC Leakage Current
±1
µA
SYNC Maximum Frequency
f
SYNC
2.4
MHz
SYNC On-Time
50
ns
SYNC Off-Time
200
ns
PWM LOGIC
PWM Comparator Propagation
Delay
70
ns
PPWM to XFRMRL Delay
PPWM rising
120
ns
DRVDEL Reference Voltage
1.14
1.38
V
PPWM Output High
Sourcing 2mA
2.8
V
PPWM Output Low
Sinking 2mA
0.4
V
PWMSD Logic High
3.5
V
PWMSD Logic Low
0.8
V
PWMSD Leakage Current
±1
µA
SOFT-START
Soft-Start Current
I
CSS
33
µA
Minimum OPTO Voltage
CSS = 0, sinking 2mA
1.4
V
RAMP GENERATOR
Minimum RCFF Voltage
RCFF sinking 2mA
2.1
V
RCFF Leakage
±0.1
±1
µA
OVERLOAD FAULT
FLTINT Pulse Current
I
FLTINT
80
µA
FLTINT Trip Point
2.0
2.7
3.5
V
FLTINT Hysteresis
0.75
V
INTERNAL POWER FETs
On-Resistance
R
DSON
V
D R V I N
= V
BS T
= 9V , V
X F RM RH
= V
S R C
= 0,
I
DS
= 190mA
75
200
m
Ω
Off-State Leakage Current
10
µA
Total Gate Charge Per FET
Inferred from supply current with V
D S
= 50V
45
nC
HIGH-SIDE DRIVER
Low-to-High Latency
Driver delay until FET V
GS
reaches 0.9 x
(V
BST
- V
XFRMRH
)
80
ns
High-to-Low Latency
Driver delay until FET V
GS
reaches 0.1 x
(V
BST
- V
XFRMRH
)
45
ns
Output Drive Voltage
BST to XFRMRH with high side on
8
V
LOW-SIDE DRIVER
Low-to-High Latency
Driver delay until FET V
GS
reaches 0.9 x
V
DRVIN
80
ns