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Electrical characteristics (continued) – Rainbow Electronics MAX5043 User Manual

Page 4

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MAX5042/MAX5043

Two-Switch Power ICs with Integrated
Power MOSFETs and Hot-Swap Controller

4

_______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS (continued)

(V

POSINPWM

= 20V to 76V, V

REG15

= 18V, C

REG15

= 4.7µF, C

REG9

= 1µF, C

REG5

= 1µF, R

RCOSC

= 24kΩ, C

RCOSC

= 100pF, C

BST

=

0.22µF, R

DRVDEL

= 10kΩ, C

DRVDEL

= 0.22µF, V

CSS

= V

CSP

= V

CSN

= V

RAMP

= V

PWMNEG

= V

NEGIN

= 0, T

A

= -40°C to +125°C,

unless otherwise noted. Typical values are at V

POSINPWM

= 48V, T

A

= +25°C, unless otherwise noted. All voltages are referred to

PWMNEG, unless otherwise noted.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

SYNC Leakage Current

±1

µA

SYNC Maximum Frequency

f

SYNC

2.4

MHz

SYNC On-Time

50

ns

SYNC Off-Time

200

ns

PWM LOGIC

PWM Comparator Propagation
Delay

70

ns

PPWM to XFRMRL Delay

PPWM rising

120

ns

DRVDEL Reference Voltage

1.14

1.38

V

PPWM Output High

Sourcing 2mA

2.8

V

PPWM Output Low

Sinking 2mA

0.4

V

PWMSD Logic High

3.5

V

PWMSD Logic Low

0.8

V

PWMSD Leakage Current

±1

µA

SOFT-START

Soft-Start Current

I

CSS

33

µA

Minimum OPTO Voltage

CSS = 0, sinking 2mA

1.4

V

RAMP GENERATOR

Minimum RCFF Voltage

RCFF sinking 2mA

2.1

V

RCFF Leakage

±0.1

±1

µA

OVERLOAD FAULT

FLTINT Pulse Current

I

FLTINT

80

µA

FLTINT Trip Point

2.0

2.7

3.5

V

FLTINT Hysteresis

0.75

V

INTERNAL POWER FETs

On-Resistance

R

DSON

V

D R V I N

= V

BS T

= 9V , V

X F RM RH

= V

S R C

= 0,

I

DS

= 190mA

75

200

m

Off-State Leakage Current

10

µA

Total Gate Charge Per FET

Inferred from supply current with V

D S

= 50V

45

nC

HIGH-SIDE DRIVER

Low-to-High Latency

Driver delay until FET V

GS

reaches 0.9 x

(V

BST

- V

XFRMRH

)

80

ns

High-to-Low Latency

Driver delay until FET V

GS

reaches 0.1 x

(V

BST

- V

XFRMRH

)

45

ns

Output Drive Voltage

BST to XFRMRH with high side on

8

V

LOW-SIDE DRIVER

Low-to-High Latency

Driver delay until FET V

GS

reaches 0.9 x

V

DRVIN

80

ns