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Electrical characteristics (continued) – Rainbow Electronics MAX9945 User Manual

Page 3

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MAX9945

38V, Low-Noise, MOS-Input,

Low-Power Op Amp

_______________________________________________________________________________________

3

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

R

OUT

= 10k

Ω to GND T

A

= T

MIN

to T

MAX

V

EE

+

0.26

V

EE

+

0.45

Output Voltage Low

V

OL

R

OUT

= 100k

Ω to

GND

T

A

= T

MIN

to T

MAX

V

EE

+

0.05

V

EE

+

0.15

V

R

OUT

= 10k

Ω to GND T

A

= T

MIN

to T

MAX

V

CC

-

0.45

V

CC

-

0.24

Output Voltage High

V

OH

R

OUT

= 100k

Ω to

GND

T

A

= T

MIN

to T

MAX

V

CC

-

0.15

V

CC

-

0.03

V

AC ELECTRICAL CHARACTERISTICS

Input Current-Noise Density

I

N

f = 1kHz

1

fA/

√Hz

Input Voltage Noise

V

NP-P

f = 0.1Hz to 10Hz

2

µV

P-P

f = 100Hz

25

f = 1kHz

16.5

Input Voltage-Noise Density

V

N

f = 10kHz

15

nV/

√Hz

Gain Bandwidth

GBW

3

MHz

Slew Rate

SR

2.2

V/µs

Capacitive Loading (Note 4)

C

LOAD

No sustained oscillations

120

pF

Total Harmonic Distortion

THD

V

OUT

= 4.5V

P-P

, A

V

= 1V/V,

f = 10kHz, R

OUT

= 10k

Ω to GND

97

dB

POWER-SUPPLY ELECTRICAL CHARACTERISTICS

Power-Supply Voltage Range

V

CC

- V

EE

Guaranteed by PSRR, V

EE

= 0

+4.75

+38

V

Power-Supply Rejection Ratio

PSRR

V

CC

- V

EE

= +4.75V to +38V

82

100

dB

T

A

= +25°C

400

700

Quiescent Supply Current

I

CC

T

A

= T

MIN

to T

MAX

850

µA

ELECTRICAL CHARACTERISTICS (continued)

(V

CC

= +15V, V

EE

= -15V, V

IN+

= V

IN-

= GND = 0, R

OUT

= 100k

Ω to GND, T

A

= -40°C to +125°C, typical values are at T

A

= +25°C,

unless otherwise noted.) (Note 2)

Note 2: All devices are 100% production tested at T

A

= +25°C. All temperature limits are guaranteed by design.

Note 3: IN+ and IN- are internally connected to the gates of CMOS transistors. CMOS GATE leakage is so small that it is impractical

to test in production. Devices are screened during production testing to eliminate defective units.

Note 4: Specified over all temperatures and process variation by circuit simulation.