Electrical characteristics (continued) – Rainbow Electronics MAX9945 User Manual
Page 3

MAX9945
38V, Low-Noise, MOS-Input,
Low-Power Op Amp
_______________________________________________________________________________________
3
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
R
OUT
= 10k
Ω to GND T
A
= T
MIN
to T
MAX
V
EE
+
0.26
V
EE
+
0.45
Output Voltage Low
V
OL
R
OUT
= 100k
Ω to
GND
T
A
= T
MIN
to T
MAX
V
EE
+
0.05
V
EE
+
0.15
V
R
OUT
= 10k
Ω to GND T
A
= T
MIN
to T
MAX
V
CC
-
0.45
V
CC
-
0.24
Output Voltage High
V
OH
R
OUT
= 100k
Ω to
GND
T
A
= T
MIN
to T
MAX
V
CC
-
0.15
V
CC
-
0.03
V
AC ELECTRICAL CHARACTERISTICS
Input Current-Noise Density
I
N
f = 1kHz
1
fA/
√Hz
Input Voltage Noise
V
NP-P
f = 0.1Hz to 10Hz
2
µV
P-P
f = 100Hz
25
f = 1kHz
16.5
Input Voltage-Noise Density
V
N
f = 10kHz
15
nV/
√Hz
Gain Bandwidth
GBW
3
MHz
Slew Rate
SR
2.2
V/µs
Capacitive Loading (Note 4)
C
LOAD
No sustained oscillations
120
pF
Total Harmonic Distortion
THD
V
OUT
= 4.5V
P-P
, A
V
= 1V/V,
f = 10kHz, R
OUT
= 10k
Ω to GND
97
dB
POWER-SUPPLY ELECTRICAL CHARACTERISTICS
Power-Supply Voltage Range
V
CC
- V
EE
Guaranteed by PSRR, V
EE
= 0
+4.75
+38
V
Power-Supply Rejection Ratio
PSRR
V
CC
- V
EE
= +4.75V to +38V
82
100
dB
T
A
= +25°C
400
700
Quiescent Supply Current
I
CC
T
A
= T
MIN
to T
MAX
850
µA
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +15V, V
EE
= -15V, V
IN+
= V
IN-
= GND = 0, R
OUT
= 100k
Ω to GND, T
A
= -40°C to +125°C, typical values are at T
A
= +25°C,
unless otherwise noted.) (Note 2)
Note 2: All devices are 100% production tested at T
A
= +25°C. All temperature limits are guaranteed by design.
Note 3: IN+ and IN- are internally connected to the gates of CMOS transistors. CMOS GATE leakage is so small that it is impractical
to test in production. Devices are screened during production testing to eliminate defective units.
Note 4: Specified over all temperatures and process variation by circuit simulation.