C&H Technology CM300HA-28H - Manual (Page 3)

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CM300HA-28H
Single IGBTMOD™ H-Series Module
300 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM300HA-28H Units
Junction Temperature T
j
–40 to 150 °C
Storage Temperature T
stg
–40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V
CES
1400 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±20 Volts
Collector Current (T
c
= 25°C) I
C
300 Amperes
Peak Collector Current (T
j
≤ 150°C) I
CM
600 Amperes
Emitter Current* (T
c
= 25°C) I
E
300 Amperes
Peak Emitter Current* (T
j
≤ 150°C) I
EM
600 Amperes
Maximum Collector Dissipation (T
c
= 25°C) P
c
2100 Watts
Max. Mounting Torque M6 Main Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Max. Mounting Torque M4 Terminal Screws – 13 in-lb
Module Weight (Typical) – 400 Grams
V Isolation (Main Terminal to Baseplate, AC 1 min.) V
RMS
2500 Volts
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
CES
, V
CE
= 0V – – 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 30mA, V
CE
= 10V 5.0 6.5 8.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 300A, V
GE
= 15V, T
j
= 25°C – 3.1 4.2 Volts
I
C
= 300A, V
GE
= 15V, T
j
= 125°C – 2.95 – Volts
Total Gate Charge Q
G
V
CC
= 800V, I
C
= 300A, V
GE
= 15V – 1530 – nC
Emitter-Collector Voltage* V
EC
I
E
= 300A, V
GE
= 0V – – 3.8 Volts
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 60 nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V, f = 1MHz – – 21 nF
Reverse Transfer Capacitance C
res
– – 12 nF
Resistive Turn-on Delay Time t
d(on)
– – 250 ns
Load Rise Time t
r
V
CC
= 800V, I
C
= 300A – – 500 ns
Switching Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 1.0Ω – – 350 ns
Times Fall Time t
f
– – 500 ns
Diode Reverse Recovery Time* t
rr
I
E
= 300A, di
E
/dt = –600A/µs – – 300 ns
Diode Reverse Recovery Charge* Q
rr
I
E
= 300A, di
E
/dt = –600A/µs – 3.0 – µC
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Per IGBT – – 0.06 °C/W
Thermal Resistance, Junction to Case R
th(j-c)
Per FWDi – – 0.12 °C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – – 0.04 °C/W
* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode.