C&H Technology CM1200HC-66H - Manual (Page 5)

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE
( V
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
( V
)
2000
2400
1600
1200
800
400
0
3 4 2 1 0 5 6
5
6
4
3
2
1
0
1200 1600 800 400 0 2000 2400
5
6
4
3
2
1
0
1200 1600 800 400 0 2000 2400
2000
2400
1600
1200
800
400
0
6 8 4 2 0 10 12
T j = 25
°
C
T j = 125
°
C
T j = 25
°
C
T j = 125 ° C
T j = 25
°
C
T j = 125 ° C
V GE = 15V
V CE = 20V T j = 125
°
C
V GE = 10V
V GE = 8V
V GE = 12V
V GE = 20V
V GE = 15V