C&H Technology CM1200HC-66H - Manual (Page 4)

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
R th(j-c)Q
R th(j-c)R
R th(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
λ
grease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
8.5
17.0
—
—
—
6.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions
Limits
Unit
M
—
CTI
d a
d s
L C-E(int)
R C-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
T C = 25
°
C
N·m
kg
—
mm
mm
nH
m Ω
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
13.0
6.0
2.0
—
—
—
—
—
—
—
—
—
1.5
—
—
—
10
0.16
7.0
3.0
1.0
—
600
19.5
32.0
—
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Limits
Unit