C&H Technology CM1800HCB-34N - Manual (Page 3)

CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2 12/08
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM1800HCB-34N Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Operating Temperature T
op
-40 to 125 °C
Collector-Emitter Voltage (V
GE
= 0V) V
CES
1700 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (DC, T
c
= 80°C) I
C
1800 Amperes
Peak Collector Current (Pulse) I
CM
3600* Amperes
Diode Forward Current** (T
c
= 25°C) I
E
1800 Amperes
Diode Forward Surge Current** (Pulse) I
EM
3600* Amperes
Maximum Collector Dissipation (T
c
= 25°C, IGBT Part, T
j
≤ 150°C) P
C
13800 Watts
Max. Mounting Torque M8 Terminal Screws – 115 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb
Max. Turn-off Switching Current (V
CC
≤ 1200V, V
GE
= ±15V, T
j
= 125°C) – 3600 Amperes
Short-circuit Capability, Max. Pulse Width (V
CC
≤ 1000V, V
GE
= ±15V, T
j
= 125°C) – 10 μs
Max. Reverse Recovery Instantaneous Power** – 540 kW
(V
CC
≤ 1200V, di
E
/dt ≤ t.b.d A/μs, T
j
= 125°C)
Module Weight (Typical) – 1.5 kg
V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) V
iso
4000 Volts
* Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T op(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C – – 8.0 mA
V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C – – 16.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 180mA, V
CE
= 10V 5.0 6.0 7.0 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5 μA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 1800A*, V
GE
= 15V, T
j
= 25°C – 2.0 – Volts
I
C
= 1800A*, V
GE
= 15V, T
j
= 125°C – 2.2 – Volts
Total Gate Charge Q
G
V
CC
= 900V, I
C
= 1800A, V
GE
= 15V – 13.6 – μC
Emitter-Collector Voltage** V
EC
I
E
= 1800A*, V
GE
= 0V, T
j
= 25°C – 2.35 – Volts
I
E
= 1800A*, V
GE
= 0V, T
j
= 125°C – 1.85 – Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).