C&H Technology 8EWS..SPbF High Voltage Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94349
2 Revision: 22-Jul-08
8EWS..SPbF High Voltage Series
Vishay High Power Products Surface Mountable
Input Rectifier Diode, 8 A
Note
(1) When mounted on 1" square (650 mm 2 ) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 105 °C, 180 ° conduction half sine wave 8
A Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I 2 t for fusing I 2 t
10 ms sine pulse, rated V
RRM
applied 130
A 2 s
10 ms sine pulse, no voltage reapplied 145
Maximum I 2 √t for fusing
I 2 √t
t = 0.1 to 10 ms, no voltage reapplied 1450 A 2 √s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
8 A, T
J
= 25 °C 1.1 V
Forward slope resistance r
t
T
J
= 150 °C
20 m Ω
Threshold voltage V
F(TO)
0.82 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.05
mA
T
J
= 150 °C 0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150
°C
Soldering temperature T
S
240
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1) 62
Approximate weight
1 g
0.03 oz.
Marking device Case style D-PAK (TO-252AA) 8EWS12S