C&H Technology CM1200DC-34N - Manual (Page 4)

CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3 01/11 Rev. 1
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 4 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 120mA, V
CE
= 10V 6.0 7.0 8.0 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 1200A, V
GE
= 15V, T
j
= 25°C* 4 – 2.15 2.80 Volts
I
C
= 1200A, V
GE
= 15V, T
j
= 125°C* 4 – 2.40 – Volts
Input Capacitance C
ies
– 176 – nF
Output Capacitance C
oes
V
CE
= 10V, f = 100kHz, V
GE
= 0V – 9.6 – nF
Reverse Transfer Capacitance C
res
– 2.8 – nF
Total Gate Charge Q
G
V
CC
= 850V, I
C
= 1200A, V
GE
= 15V – 6.8 – µC
Emitter-Collector Voltage V
EC
* 2 I
E
= 1200A, V
GE
= 0V, T
j
= 25°C* 4 – 2.60 3.30 Volts
I
E
= 1200A, V
GE
= 0V, T
j
= 125°C* 4 – 2.30 – Volts
Turn-On Delay Time t
d(on)
V
CC
= 850V, I
C
= 1200A, – 1.00 – µs
Turn-On Rise Time t
r
V
GE
= ±15V, R
G(on)
= 1.3Ω, – 0.40 – µs
Turn-On Switching Energy E
on
T
j
= 125°C, L
s
= 150nH, Inductive Load – 380 – mJ/P
Turn-Off Delay Time t
d(off)
V
CC
= 850V, I
C
= 1200A, – 1.20 – µs
Turn-Off Fall Time t
f
V
GE
= ±15V, R
G(off)
= 3.3Ω, – 0.30 – µs
Turn-Off Switching Energy E
off
T
j
= 125°C, L
s
= 150nH, Inductive Load – 360 – mJ/P
Reverse Recovery Time t
rr
* 2 V
CC
= 850V, I
C
= 1200A, – 1.00 – µs
Reverse Recovery Current I
rr
* 2 V
GE
= ±15V, R
G(on)
= 1.3Ω, – 560 – Amperes
Reverse Recovery Charge Q
rr
* 2 T
j
= 125°C, L
s
= 150nH, – 300 – µC
Reverse Recovery Energy E
rec
* 2 Inductive Load – 220 – mJ/P
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.