Dual igbtmod™ hvigbt module – C&H Technology CM1200DC-34N User Manual
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Dual IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
CM1200DC-34N
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
1
01/11 Rev. 1
Outline Drawing and Circuit Diagram
A
D
D
F
E
C
4
2
3
E1
E2
G1
G2
C1
C2
1
B
G
AB
AA
Z
H
N
T
R
4(E1)
3(C1)
2(C2)
1(E2)
C1
G1
E1
E2
G2
C2
P
Q
S
J
Q
U
W
V
Y
X
K (4 TYP)
M (3 TYP)
L
(6 PLACES)
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
Traction
£
Medium Voltage Drives
£
High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DC-34N is a 1700V
(V
CES
), 1200 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM 1200 34
Dimensions Inches Millimeters
A
5.12
±0.02 130.0±0.5
B
5.51
±0.02 140.0±0.5
C
4.88
±0.01 124.0±0.25
D
2.24
±0.01 57.0±0.25
E
1.18
±0.008 30.0±0.2
F
0.79
±0.004 20.0±0.1
G
2.09
±0.008 53.0±0.2
H
1.57
±0.008 40.0±0.2
J
1.73
±0.008 44.0±0.2
K
M8 Metric
M8
L
0.28 Dia.
7.0 Dia.
M
M4 Metric
M4
N
2.17
±0.01 55.2±0.3
Dimensions Inches Millimeters
P
1.50+0.04/-0.0 38.0+1.0/-0.0
Q
0.2
±0.008 5.0±0.2
R
0.65 Min.
16.5 Min.
S
0.30 Min.
7.7 Min.
T
0.47
±0.008 11.85±0.2
U
1.16
±0.02 29.5±0.5
V
0.45
±0.008 11.5±0.2
W
0.55
±0.008 14.0±0.2
X
1.10+0.04/-0.0 28.0+1.0/-0.0
Y
1.38
±0.008 35.0±0.2
Z
0.63
±0.008 16.0±0.2
AA
0.71
±0.008 18.0±0.2
AB
2.24
±0.008 57.0±0.2