C&H Technology CM1200HG-66H - Manual (Page 7)

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10 -2 10 -3 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7
10 3
10 4
10 2
10 1
10 1
10 2
10 0
10 -1
10 2 10 1 2 3 5 7 10 3 10 4 2 3 5 7 2 3 5 7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10 1
10 2
10 0
10 -1
10 2 10 1 2 3 5 7 10 3 10 4 2 3 5 7 2 3 5 7
2
3
5
7
2
3
5
7
2
3
5
7
COLLECTOR CURRENT (A)
SWITCHING TIMES
(
µ
s
)
TIME (s)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME
(
µ
s
)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
REVERSE RECOVERY CURRENT
( A
)
V CC = 1650V, V GE = ± 15V
R G(on) = R G(off) = 1.6 Ω
T j = 125
°
C, Inductive load
V CC = 1650V, V GE =
±
15V
R G(on) = R G(off) = 1.6
Ω
T j = 125 ° C, Inductive load
t d(off)
t d(on)
t r
t f
t rr
I rr
Single Pulse, T C = 25 ° C
R th(j–c)Q = 10K/kW
R th(j–c)R = 20K/kW