Mitsubishi hvigbt modules, High power switching use insulated type – C&H Technology CM1200HG-66H User Manual
Page 3
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25
°
C
I
C
= 1200A, V
GE
= 15V, T
j
= 25
°
C
(Note 4)
I
C
= 1200A, V
GE
= 15V, T
j
= 125
°
C
(Note 4)
V
CC
= 1650V, I
C
= 1200A, V
GE
= 15V, T
j
= 25
°
C
I
E
= 1200A, V
GE
= 0V, T
j
= 25
°
C
(Note 4)
I
E
= 1200A, V
GE
= 0V, T
j
= 125
°
C
(Note 4)
V
CC
= 1650V, I
C
= 1200A, V
GE
=
±
15V
R
G(on)
= 1.6
Ω
,
T
j
= 125
°
C, L
s
= 100nH
Inductive load
V
CC
= 1650V, I
C
= 1200A, V
GE
=
±
15V
R
G(off)
= 1.6
Ω
,
T
j
= 125
°
C, L
s
= 100nH
Inductive load
V
CC
= 1650V, I
C
= 1200A, V
GE
=
±
15V
R
G(on)
= 1.6
Ω
,
T
j
= 125
°
C, L
s
= 100nH
Inductive load
I
C
= 120mA, V
CE
= 10V, T
j
= 25
°
C
V
CE
= 10V, f = 100kHz
V
GE
= 0V, T
j
= 25
°
C
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Partial discharge
Maximum short circuit pulse
width
V
GE
= 0V, T
j
= 25
°
C
V
CE
= 0V, T
j
= 25
°
C
T
C
= 90
°
C
Pulse
(Note 1)
Pulse
(Note 1)
T
C
= 25
°
C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V1 = 6900V
rms
, V2 = 5100V
rms
f = 60Hz (acc. to IEC 1287)
V
CC
= 2200V, V
CES
≤
3300V, V
GE
= 15V
T
j
= 125
°
C
Collector current
Emitter current
3300
±
20
1200
2400
1200
2400
12500
–40 ~ +150
–40 ~ +125
–40 ~ +125
10200
10
10
MAXIMUM RATINGS
Symbol
Item
Conditions
Unit
Ratings
V
V
A
A
A
A
W
°
C
°
C
°
C
V
pC
µ
s
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM(Note 2)
P
C (Note 3)
T
j
T
op
T
stg
V
iso
Q
pd
t
psc
Min
Typ
Max
15
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.40
—
—
mA
µ
A
nF
nF
nF
µ
C
V
µ
s
µ
s
J/pulse
µ
s
µ
s
J/pulse
µ
s
µ
C
J/pulse
—
—
3.30
3.60
180
18.0
5.4
8.6
2.80
2.70
—
—
1.60
—
—
1.55
—
800
0.90
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
CES
I
GES
C
ies
C
oes
C
res
Q
g
V
EC(Note 2)
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
t
rr
(Note 2)
Q
rr (Note 2)
E
rec (Note 2)
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
6.0
5.0
Note 1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125
°
C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
j
) should not exceed T
jmax
rating (150
°
C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.0
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules