C&H Technology CM400HG-66H - Manual (Page 6)

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10 2
10 3
10 1
10 0
10 0 10 -1 2 3 5 7 10 1 10 2 2 3 5 7 2 3 5 7
2
3
5
7
2
3
5
7
2
3
5
7
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE
( nF
)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE ( µ C)
GATE-EMITTER VOLTAGE
( V
)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES
( J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE ( Ω )
SWITCHING ENERGIES
( J/pulse
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
0
3 2 1 0 4
3
2.5
2
1.5
1
0
10 20 0 30 40 50
0.5
1.4
1.2
1
0.8
0.6
0
200 400 0 600 800
0.2
0.4
V CC = 1650V, I C = 400A
T j = 25 ° C
E on
E off
E rec
E off
C ies
C oes
C res
V CC = 1650V, I C = 400A
V GE = ± 15V
T j = 125
°
C, Inductive load
V CC = 1650V, V GE = ± 15V
R G(on) = R G(off) = 5 Ω
T j = 125
°
C, Inductive load
E on
V GE = 0V, T j = 25 ° C
f = 100kHz
E rec