C&H Technology 20MT120UF - Manual (Page 4)

20MT120UF
I27124 rev. D 02/03
V
FM
Diode Forward Voltage Drop 2.48 2.94 V I
C
= 20A
3.28 3.90 I
C
= 40A
2.44 2.84 I
C
= 20A, T
J
= 125°C
3.45 4.14 I
C
= 40A, T
J
= 125°C
2.21 2.93 I
C
= 20A, T
J
= 150°C
E
rec
Reverse Recovery Energy of the Diode 420 630 µJ V
GE
= 15V, R
g
= 5 Ω, L = 200µH
trr Diode Reverse Recovery Time 98 150 ns V
CC
= 600V, I
C
= 20A
Irr Peak Reverse Recovery Current 33 50 A T
J
= 125°C
Thermal- Mechanical Specifications
T
J
Operating Junction Temperature Range - 40 150 °C
T
STG
Storage Temperature Range - 40 125
R
thJC
Junction-to-Case IGBT 0.35 0.52 °C/ W
Diode 0.40 0.61
R
thCS
Case-to-Sink Module 0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance ( external shortest distance in air 5.5 mm
between two terminals)
Creepage ( shortest distance along external 8
surface of the insulating material between 2 terminals )
T Mounting Torque (2) 3 ± 10% Nm
Wt Weight 66 g (oz)
Parameters Min Typ Max Units
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
Document Number: 93588 www.vishay.com
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