C&H Technology CM100DU-34KA User Manual
Page 3
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CM100DU-34KA
Dual IGBTMOD™ KA-Series Module
100 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM100DU-34KA
Units
Junction Temperature
T
j
-40 to 150
°
C
Storage Temperature
T
stg
-40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1700
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
±
20
Volts
Collector Current (T
c
= 25
°
C)
I
C
100
Amperes
Peak Collector Current (T
j
≤
150
°
C)
I
CM
200*
Amperes
Emitter Current** (T
c
= 25
°
C)
I
E
100
Amperes
Peak Emitter Current**
I
EM
200*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C)
P
c
890
Watts
Mounting Torque, M6 Main Terminal
–
40
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
Weight
–
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
3500
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
–
–
1
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
–
–
0.5
µ
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 10mA, V
CE
= 10V
4.0
5.5
7.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 100A, V
GE
= 15V, T
j
= 25
°
C
–
3.2
4.0
Volts
I
C
= 100A, V
GE
= 15V, T
j
= 125
°
C
–
3.8
–
Volts
Total Gate Charge
Q
G
V
CC
= 1000V, I
C
= 100A, V
GE
= 15V
–
450
–
nC
Emitter-Collector Voltage*
V
EC
I
E
= 100A, V
GE
= 0V, T
j
= 25
°
C
–
–
4.6
Volts
I
E
= 100A, V
GE
= 0V, T
j
= 125
°
C
–
2.2
–
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
–
–
14.0
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
–
–
2.4
nf
Reverse Transfer Capacitance
C
res
–
–
0.75
nf
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 1000V, I
C
= 100A,
–
–
350
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
–
–
150
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 3.1
⍀
, Resistive
–
–
550
ns
Times
Fall Time
t
f
Inductive Load
–
–
800
ns
Reverse Recovery Time
t
rr
Switching Operation
–
–
600
ns
Reverse Recovery Charge
Q
rr
I
E
= 100A
–
5.8
–
µ
C
2