C&H Technology CM1200E4C-34N - Manual (Page 4)

CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3 8/05
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C – – 4.0 mA
V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C – 3.0 8.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 120mA, V
CE
= 10V 6.0 7.0 8.0 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 1200A, V
GE
= 15V, T
j
= 25°C – 2.15 2.80 Volts
I
C
= 1200A, V
GE
= 15V, T
j
= 125°C – 2.4 – Volts
Input Capacitance C
ies
V
CE
= 10V, V
GE
= 0V, – 176 – nF
Output Capacitance C
oes
f = 100kHz, – 9.6 – nF
Reverse Transfer Capacitance C
res
T
j
= 25°C – 2.8 – nF
Total Gate Charge Q
G
V
CC
= 850V, I
C
= 1200A, V
GE
= 15V – 6.8 – µC
Emitter-Collector Voltage** V
EC
I
E
= 1200A, V
GE
= 0V, T
j
= 25°C – 2.6 3.3 V olts
I
E
= 1200A, V
GE
= 0V, T
j
= 125°C – 2.3 – Volts
Forward Voltage*** V
F
I
F
= 1200A, V
GE
= 0V, T
j
= 25°C – 2.6 – Volts
I
F
= 1200A, V
GE
= 0V, T
j
= 125°C – 2.3 – Volts
Turn-On Delay Time t
d(on)
V
CC
= 850V, I
C
= 1200A, – 0.8 – µs
Turn-On Rise Time t
r
V
GE1
= -V
GE2
= 15V, R
G(on)
= 0.6Ω, – 0.4 – µs
Turn-On Switching Energy E
on
Inductive Load – 380 – mJ/P
Turn-Off Delay Time t
d(off)
V
CC
= 850V, I
C
= 1200A, – 1.2 – µs
Turn-Off Fall Time t
f
V
GE1
= -V
GE2
= 15V, R
G(off)
= 3.3Ω, – 0.3 – µs
Turn-Off Switching Energy E
off
Inductive load – 360 – mJ/P
Reverse Recovery Time** I
rr
V
CC
= 850V, I
E
= 1200A, – 560 – Amperes
Reverse Recovery Time** t
rr
di
e
/dt = -2900A/µs, – 1.0 – µs
Reverse Recovery Charge** Q
rr
T
j
= 125°C, – 300 – µC
Reverse Recovery Energy** E
rec
Inductive Load – 220 – mJ/P
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***The symbols represent characteristics of the clamp diode (Clamp Di).
Thermal Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT – – 19.0 K/kW
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi – – 42.0 K/kW
Thermal Resistance, Junction to Case R
th(j-c)
D Clamp Di — — 42.0 K/kW
Contact Thermal Resistance, Case to Fin R
th(c-f)
Per Module, Thermal Grease Applied – 16.0 – K/kW
Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Comparative Tracking Index CTI – 600 – – –
Clearance – – 1 9.5 – – mm
Creepage Distance – – 32 .0 – – mm
Internal Inductance L
C-E(int)
– – 30 – nH
Internal Lead Resistance R
C-E(int)
– – 0.28 – mΩ