C&H Technology CM150DU-24F - Manual (Page 4)

3
CM150DU-24F
Trench Gate Design Dual IGBTMOD™
150 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 59 nf
Output Capacitance C oes V CE = 10V, V GE = 0V – – 2.6 nf
Reverse Transfer Capacitance C
res
– – 1.5 nf
Inductive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 150A, – – 150 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 80 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 2.1 ⍀ , – – 450 ns
Times Fall Time t
f
Inductive Load – – 300 ns
Diode Reverse Recovery Time** t rr Switching Operation – – 150 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 150A – 6.0 – µ C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/2 Module, T
c
Reference – 0.21
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R th(j-c) D Per FWDi 1/2 Module, T c Reference – – 0.24
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
'Q Per IGBT 1/2 Module, – 0.11 ° C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.020 –
°
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).