C&H Technology CM150DU-24F - Manual (Page 3)

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CM150DU-24F
Trench Gate Design Dual IGBTMOD™
150 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM150DU-24F Units
Junction Temperature T
j
-40 to 150
°
C
Storage Temperature T
stg
-40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT) V
CES
1200 Volts
Gate-Emitter Voltage (C-E SHORT) V GES
±
20 Volts
Collector Current (T
c
= 25 ° C) I
C
150 Amperes
Peak Collector Current (T
j
≤ 150 ° C) I
CM
300* Amperes
Emitter Current** (T
c
= 25
°
C) I
E
150 Amperes
Peak Emitter Current** I
EM
300* Amperes
Maximum Collector Dissipation (T
c
= 25
°
C) P
c
600 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I CES V CE = V CES , V GE = 0V – – 1 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 20 µ A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 15mA, V
CE
= 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 150A, V
GE
= 15V, T
j
= 25
°
C – 1.8 2.4 Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125
°
C – 1.9 – Volts
Total Gate Charge Q G V CC = 600V, I C = 150A, V GE = 15V – 1650 – nC
Emitter-Collector Voltage** V
EC
I
E
= 150A, V
GE
= 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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