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C&H Technology CM450HA-5F User Manual

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366

CM450HA-5F

Trench Gate Design Single IGBTMOD™

450 Amperes/250 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Absolute Maximum Ratings, T

j

= 25°C unless otherwise specified

Characteristics

Symbol

CM450HA-5F

Units

Junction Temperature

T

j

-40 to 150

°C

Storage Temperature

T

stg

-40 to 125

°C

Collector-Emitter Voltage (G-E Short)

V

CES

250

Volts

Gate-Emitter Voltage (C-E Short)

V

GES

±20

Volts

Collector Current

I

C

450

Amperes

Peak Collector Current

I

CM

900*

Amperes

Diode Forward Current

I

FM

450

Amperes

Diode Forward Surge Current

I

FM

900*

Amperes

Power Dissipation

P

d

735

Watts

Maximum Mounting Torque, M6 Terminal Screws

26

in-lb

Maximum Mounting Torque, M6 Mounting Screws

26

in-lb

Maximum Mounting Torque, M4 (G, E) Terminal Screws

13

in-lb

Module Weight (Typical)

270

Grams

V Isolation Voltage

V

RMS

2500

Volts

Static Electrical Characteristics, T

j

= 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

I

CES

V

CE

= V

CES

, V

GE

= 0V

1.0

mA

Gate Leakage Current

I

GES

V

GE

= V

GES

, V

CE

= 0V

0.5

µA

Gate-Emitter Threshold Voltage

V

GE(th)

I

C

= 45mA, V

CE

= 10V

3.0

4.0

5.0

Volts

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 450A, V

GE

= 10V,

1.2

1.7

Volts

I

C

= 450A, V

GE

= 10V, T

j

= 150°C

1.1

Volts

Total Gate Charge

Q

G

V

CC

= 50V, I

C

= 450A, V

GS

= 15V

1760

nC

Diode Forward Voltage

V

FM

I

E

= 450A, V

GS

= 0V

2.0

Volts

Dynamic Electrical Characteristics, T

j

= 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

C

IES

132

nF

Output Capacitance

C

OES

V

GE

= 0V, V

CE

= 10V

6

nF

Reverse Transfer Capacitance

C

RES

4.5

nF

Resistive

Turn-on Delay Time

t

d(on)

1200

ns

Load

Rise Time

t

r

V

CC

= 50V, I

C

= 450A,

2700

ns

Switching

Turn-off Delay Time

t

d(off)

V

GE1

= V

GE2

= 10V, R

G

= 5.6Ω,

900

ns

Times

Fall Time

t

F

Resistive Load

500

ns

Diode Reverse Recovery Time

t

rr

I

E

= 450A, di

E

/dt = -900A/ms

300

ns

Diode Reverse Recovery Charge

Q

rr

I

E

= 450A, di

E

/dt = -900A/ms

7.6

µC

Thermal and Mechanical Electrical Characteristics, T

j

= 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

R

th(j-c)

Per IGBT

0.17

°C/W

Thermal Resistance, Junction to Case

R

th(j-c)

Per Free Wheel Diode

0.23

°C/W

Contact Thermal Resistance

R

th(c-f)

Per Module, Thermal Grease Applied

0.090

°C/W