C&H Technology CM450HA-5F - Manual (Page 3)

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CM450HA-5F
Trench Gate Design Single IGBTMOD™
450 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Characteristics Symbol CM450HA-5F Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (G-E Short) V
CES
250 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current I
C
450 Amperes
Peak Collector Current I
CM
900* Amperes
Diode Forward Current I
FM
450 Amperes
Diode Forward Surge Current I
FM
900* Amperes
Power Dissipation P
d
735 Watts
Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb
Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb
Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb
Module Weight (Typical) — 270 Grams
V Isolation Voltage V
RMS
2500 Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 45mA, V
CE
= 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 450A, V
GE
= 10V, — 1.2 1.7 Volts
I
C
= 450A, V
GE
= 10V, T
j
= 150°C — 1.1 — Volts
Total Gate Charge Q
G
V
CC
= 50V, I
C
= 450A, V
GS
= 15V — 1760 — nC
Diode Forward Voltage V
FM
I
E
= 450A, V
GS
= 0V — — 2.0 Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
IES
— — 132 nF
Output Capacitance C
OES
V
GE
= 0V, V
CE
= 10V — — 6 nF
Reverse Transfer Capacitance C
RES
— — 4.5 nF
Resistive Turn-on Delay Time t
d(on)
— — 1200 ns
Load Rise Time t
r
V
CC
= 50V, I
C
= 450A, — — 2700 ns
Switching Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 10V, R
G
= 5.6Ω, — — 900 ns
Times Fall Time t
F
Resistive Load — — 500 ns
Diode Reverse Recovery Time t
rr
I
E
= 450A, di
E
/dt = -900A/ms — — 300 ns
Diode Reverse Recovery Charge Q
rr
I
E
= 450A, di
E
/dt = -900A/ms — 7.6 — µC
Thermal and Mechanical Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Per IGBT — — 0.17 °C/W
Thermal Resistance, Junction to Case R
th(j-c)
Per Free Wheel Diode — — 0.23 °C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied — — 0.090 °C/W