C&H Technology CM450HA-5F User Manual
Page 3

366
CM450HA-5F
Trench Gate Design Single IGBTMOD™
450 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Characteristics
Symbol
CM450HA-5F
Units
Junction Temperature
T
j
-40 to 150
°C
Storage Temperature
T
stg
-40 to 125
°C
Collector-Emitter Voltage (G-E Short)
V
CES
250
Volts
Gate-Emitter Voltage (C-E Short)
V
GES
±20
Volts
Collector Current
I
C
450
Amperes
Peak Collector Current
I
CM
900*
Amperes
Diode Forward Current
I
FM
450
Amperes
Diode Forward Surge Current
I
FM
900*
Amperes
Power Dissipation
P
d
735
Watts
Maximum Mounting Torque, M6 Terminal Screws
—
26
in-lb
Maximum Mounting Torque, M6 Mounting Screws
—
26
in-lb
Maximum Mounting Torque, M4 (G, E) Terminal Screws
—
13
in-lb
Module Weight (Typical)
—
270
Grams
V Isolation Voltage
V
RMS
2500
Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
—
—
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 45mA, V
CE
= 10V
3.0
4.0
5.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 450A, V
GE
= 10V,
—
1.2
1.7
Volts
I
C
= 450A, V
GE
= 10V, T
j
= 150°C
—
1.1
—
Volts
Total Gate Charge
Q
G
V
CC
= 50V, I
C
= 450A, V
GS
= 15V
—
1760
—
nC
Diode Forward Voltage
V
FM
I
E
= 450A, V
GS
= 0V
—
—
2.0
Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
IES
—
—
132
nF
Output Capacitance
C
OES
V
GE
= 0V, V
CE
= 10V
—
—
6
nF
Reverse Transfer Capacitance
C
RES
—
—
4.5
nF
Resistive
Turn-on Delay Time
t
d(on)
—
—
1200
ns
Load
Rise Time
t
r
V
CC
= 50V, I
C
= 450A,
—
—
2700
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 10V, R
G
= 5.6Ω,
—
—
900
ns
Times
Fall Time
t
F
Resistive Load
—
—
500
ns
Diode Reverse Recovery Time
t
rr
I
E
= 450A, di
E
/dt = -900A/ms
—
—
300
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 450A, di
E
/dt = -900A/ms
—
7.6
—
µC
Thermal and Mechanical Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
—
—
0.17
°C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per Free Wheel Diode
—
—
0.23
°C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
—
—
0.090
°C/W