C&H Technology CM200TU-12F - Manual (Page 5)

4
CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 1 2 3 4
240
80
0
V
GE
= 20V
11
10
9.5
9
7.5
T
j
= 25 o C
160
320
400
8.5
8
15
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.5
0 80 160 240 320
2.0
1.5
1.0
0.5
0
400
V
GE
= 15V
T
j
= 25 ° C
T
j
= 125 ° C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 4 8 12 16 20
4
3
2
1
0
T
j
= 25 ° C
I
C
= 80A
I
C
= 400A
I
C
= 200A
0
10 0
10 1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10 2
10 3
EMITTER CURRENT, I
E
, (AMPERES)
1 2 3 4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10 -1 10 0 10 2
10 2
10 1
10 0
10 -1
10 1
V
GE
= 0V
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
10 3
10 1 10 2 10 3
10 2
10 1
10 0
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= ± 15V
R
G
= 3.1 Ω
T
j
= 125 ° C
Inductive Load
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10 2
10 1 10 2 10 3
10 1
10 0
t
rr
10 2
10 1
10 0 REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
I
rr
V
CC
= 300V
V
CC
= 200V
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
16
12
8
4
0
I
C
= 200A
600 1200 1800
T
j
= 25 ° C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th
(j
-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10 1
10 -5 10 -4 10 -3
10 0
10 -1
10 -2
10 -3
10 -3 10 -2 10 -1 10 0 10 1
10 -1
10 -2
10 -3
Z
th
= R
th
• (NORMALIZED VALUE)
Per Unit Base
R
th(j-c) = 0.21 ° C/W (IGBT)
R
th(j-c)
= 0.35 ° C/W (FWDi)
Single Pulse
T
C
= 25 ° C
V
CC
= 300V
V
GE
= ± 15V
R
G
= 3.1 Ω
T
j
= 25 ° C
Inductive Load