C&H Technology CM200TU-12F - Manual (Page 3)

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CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM200TU-12F Units
Junction Temperature T
j
-40 to 150 ° C
Storage Temperature T
stg
-40 to 125 ° C
Collector-Emitter Voltage (G-E SHORT) V
CES
600 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±
20 Volts
Collector Current (T
c
= 25
°
C) I
C
200 Amperes
Peak Collector Current (T j
≤
150
°
C) I CM 400* Amperes
Emitter Current** I
E
200 Amperes
Peak Emitter Current** I
EM
400* Amperes
Maximum Collector Dissipation (T
j
< 150 ° C) P
c
590 Watts
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Voltage I
GES
V
GE
= V
CES
, V
CE
= 0V – – 20
µ
A
Gate-Emitter Threshold Voltage V GE(th) I C = 20mA, V CE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 200A, V
GE
= 15V, T
j
= 25 ° C – 1.6 2.2 Volts
I
C
= 200A, V
GE
= 15V, T
j
= 125
°
C – 1.6 – Volts
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 200A, V
GE
= 15V – 1240 – nC
Emitter-Collector Voltage** V
EC
I
E
= 200A, V
GE
= 0V – – 2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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