C&H Technology 25RIA Series - Manual (Page 7)

www.vishay.com For technical questions, contact: [email protected] Document Number: 93701
6 Revision: 19-Sep-08
25RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 25 A
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5
T = 25°C J
In
sta
n
ta
n
e
o
u
s
O
n
-s
ta
te
C
u
rr
e
n
t (
A
)
Instantaneous On-state Voltage (V)
25RIA Series
T = 125°C J
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
th
J
C
25RIA Series
T
ra
n
s
ie
n
t T
h
e
rm
a
l I
m
p
e
d
a
n
c
e
Z
(K
/W
)
Steady State Value
R = 0.75 K/W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1) (2)
Instantaneous Gate Current (A)
In
s
ta
n
ta
n
e
o
u
s G
a
te
V
o
lt
a
g
e
(
V
)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
tr<=1 µs, tp >= 6 µs
rated di/dt : 10V, 20ohms
<=30% rated di/dt : 10V, 65ohms
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
(3)
(4)
25RIA Series Frequency Limited by PG(AV)
Tj
=
-6
5
°C
Tj
=
25
°C Tj
=
1
2
5
°
C