25ria series, Vishay high power products, Medium power thyristors (stud version), 25 a – C&H Technology 25RIA Series User Manual
Page 4: Switching, Blocking, Triggering

Document Number: 93701
For technical questions, contact: [email protected]
www.vishay.com
Revision: 19-Sep-08
3
25RIA Series
Medium Power Thyristors
(Stud Version), 25 A
Vishay High Power Products
Note
• t
q
= 10 µs up to 600 V, t
q
= 30 µs up to 1600 V available on special request
Note
(1)
Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 25RIA120S90
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum rate of rise
of turned-on current
V
DRM
≤ 600 V
dI/dt
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
Ω, t
p
= 6 µs, t
r
= 0.1 µs maximum
I
TM
= (2 x rated dI/dt) A
200
A/µs
V
DRM
≤ 800 V
180
V
DRM
≤ 1000 V
160
V
DRM
≤ 1600 V
150
Typical turn-on time
t
gt
T
J
= 25 °C,
at rated V
DRM
/V
RRM
, T
J
= 125 °C
0.9
µs
Typical reverse recovery time
t
rr
T
J
= T
J
maximum,
I
TM
= I
T(AV)
, t
p
> 200 µs, dI/dt = - 10 A/µs
4
Typical turn-off time
t
q
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 µs, V
R
= 100 V,
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 100 % rated V
DRM
100
V/µs
T
J
= T
J
maximum linear to 67 % rated V
DRM
300
(1)
TRIGGERING
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum peak gate power
P
GM
T
J
= T
J
maximum
8.0
W
Maximum average gate power
P
G(AV)
2.0
Maximum peak positive gate current
I
GM
T
J
= T
J
maximum
1.5
A
Maximum peak negative gate voltage
-V
GM
T
J
= T
J
maximum
10
V
DC gate current required to trigger
I
GT
T
J
= - 65 °C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
90
mA
T
J
= 25 °C
60
T
J
= 125 °C
35
DC gate voltage required to trigger
V
GT
T
J
= - 65 °C
3.0
V
T
J
= 25 °C
2.0
T
J
= 125 °C
1.0
DC gate current not to trigger
I
GD
T
J
= T
J
maximum, V
DRM
= Rated value
2.0
mA
DC gate voltage not to trigger
V
GD
T
J
= T
J
maximum,
V
DRM
= Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
0.2
V