C&H Technology CM1400DUC-24NF User Manual
Page 4

CM1400DUC-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
3
01/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
–
–
1
mA
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 140mA, V
CE
= 10V
6
7
8
Volts
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
–
–
1.5
µA
Collector-Emitter Saturation Voltage (Chip)
V
CE(sat)
I
C
= 1400A, V
GE
= 15V, T
j
= 25°C
*6
–
1.8
2.5
Volts
(Without Lead Resistance)
I
C
= 1400A, V
GE
= 15V, T
j
= 125°C
*6
–
2.0
–
Volts
Module Lead Resistance
R
(lead)
I
C
= 1400A, Terminal-Chip
–
0.286
–
mΩ
Input Capacitance
C
ies
–
–
220
nF
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
–
–
25
nF
Reverse Transfer Capacitance
C
res
–
–
4.7
nF
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 1400A, V
GE
= 15V
–
7200
–
nC
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 1400A,
–
–
800
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
–
–
300
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 0.22Ω, Inductive Load
–
–
1000
ns
Times
Fall Time
t
f
Switching Operation
–
–
300
ns
Reverse Recovery Time
t
rr
*3
I
E
= 1400A
–
–
700
ns
Reverse Recovery Charge
Q
rr
*3
–
90
–
µC
Emitter-Collector Voltage (Chip)
V
EC
*3
I
E
= 1400A, V
GE
= 0V
*6
–
–
3.2
Volts
(Without Lead resistance)
External Gate Resistance
R
G
0.22
–
2.2
Ω
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
*1
R
th(j-c)
Q
Per IGBT (1/2 Module)
–
–
0.014
°C/W
Thermal Resistance, Junction to Case
*1
R
th(j-c)
D
Per Clamp Diode (1/2 Module)
–
–
0.023
°C/W
Contact Thermal Resistance
*1
R
th(c-f)
Thermal Grease Applied (1/2 Module)
–
0.012
–
°C/W
*1 Case temperatureT
C
and heatsink temperature (T
f
) measured point is just under the chips.
*3 I
E
, I
EM
, V
EC
, I
FSM
, I
2
t, t
rr
, Q
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible teperature rise.