C&H Technology CM400HU-24F - Manual (Page 4)

3
CM400HU-24F
Trench Gate Design Single IGBTMOD™
400 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C ies – – 160 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 6.8 nf
Reverse Transfer Capacitance C
res
– – 4 nf
Inductive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 400A, – – 300 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 100 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 0.78 ⍀ , – – 600 ns
Times Fall Time t f Inductive Load – – 300 ns
Diode Reverse Recovery Time** t
rr
Switching Operation – – 350 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 400A – 23.6 –
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT, T
c
Reference – 0.078
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi, T
c
Reference – – 0.09 ° C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
'Q Per IGBT, – 0.04
°
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.02 –
°
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).