C&H Technology CM400HU-24F - Manual (Page 3)

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CM400HU-24F
Trench Gate Design Single IGBTMOD™
400 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM400HU-24F Units
Junction Temperature T
j
-40 to 150
°
C
Storage Temperature T stg -40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT) V
CES
1200 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
± 20 Volts
Collector Current (T
c
= 25 ° C) I
C
400 Amperes
Peak Collector Current (T
j
≤
150
°
C) I
CM
800* Amperes
Emitter Current** (T
c
= 25
°
C) I
E
400 Amperes
Peak Emitter Current** I EM 800* Amperes
Maximum Collector Dissipation (T
c
= 25 ° C) P
c
1600 Watts
Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Mounting Torque, M4 Terminal – 15 in-lb
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 2 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 80
µ
A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 40mA, V
CE
= 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage V CE(sat) I C = 400A, V GE = 15V, T j = 25
°
C – 1.8 2.4 Volts
I
C
= 400A, V
GE
= 15V, T
j
= 125 ° C – 1.9 – Volts
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 400A, V
GE
= 15V – 4400 – nC
Emitter-Collector Voltage** V
EC
I
E
= 400A, V
GE
= 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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