Vishay high power products, Full bridge" igbt mtp (ultrafast npt igbt), 20 a – C&H Technology 20MT060KF User Manual
Page 4
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Document Number: 93223
4
Revision: 29-Apr-10
20MT060KF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 3 - Typical IGBT Collector Current Characteristics
V
GE
= 15 V
Fig. 4 - Maximum DC Forward Current vs. Case Temperature
Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
I
C
(A)
V
CE
(V)
0
3
6
2
5
1
4
7
0
93223_03
100
40
80
50
90
20
10
60
30
70
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
25
15
30
20
10
5
35
40
0
100
160
0
40
60
140
80
120
20
93223_04
DC
I
F
(A)
V
FM
(V)
0
3.0
0.5
1.0
1.5
2.0
2.5
0
93223_05
100
40
30
80
20
60
90
70
10
50
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
CE
S
(mA)
V
CES
(V)
100
600
200
300
400
500
0.0001
93223_06
1
0.1
0.01
0.001
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
g
eth
(V)
I
C
(mA)
0.2
1.0
0.3
0.4
0.6
0.8
0.5
0.7
0.9
3.0
3.5
4.0
4.5
93223_07
5.0
T
J
= 25 °C
T
J
= 125 °C
V
CE
(V)
T
J
(°C)
20
160
40
80
120
140
60
100
1.0
1.5
2.5
2.0
3.0
93223_08
3.5
40 A
8 A
20 A
30 A