Vishay semiconductors – C&H Technology VS-GT300FD060N User Manual
Page 8
VS-GT300FD060N
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Vishay Semiconductors
Revision: 15-Oct-12
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Document Number: 93569
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Fig. 19 - Typical Diode Reverse Recovery Current vs. dI
F
/dt,
V
rr
= 200 V, I
F
= 50 A
Fig. 20 - Typical Diode Reverse Recovery Charge vs. dI
F
/dt,
V
rr
= 200 V, I
F
= 50 A
Fig. 21 - Maximum Thermal Impedance Z
thJC
Characeristics (Trench IGBT)
Fig. 22 - Maximum Thermal Impedance Z
thJC
Characeristics (Diode)
dI
F
/dt (A/μs)
I
rr
(A)
2
4
6
8
10
12
14
16
18
20
22
24
26
28
100
200
300
400
500
T
J
= 25 °C
T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
100
200
300
400
500
T
J
= 25 °C
T
J
= 125 °C
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
DC
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impea
d
nce
Junction to Case (°C/W)