Vishay semiconductors, Preliminary – C&H Technology VS-GT250TX120U User Manual
Page 6
Preliminary
VS-GT250TX120U
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-13
5
Document Number: 93618
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 11 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 600 V, R
g
= 3.3
, V
GE
= 15 V, L = 500 μH
Fig. 12 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Fig. 13 - Maximum Thermal Impedance Z
thJC
Characteristics (DIODE)
S
witchin
g
Time (ns)
I
C
(A)
10
100
1000
0
50
100
150
200
250
300
t
d(off)
t
d(on)
t
f
t
r
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC